| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748469 | Solid-State Electronics | 2013 | 4 Pages |
An analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor is presented. By analyzing the model, the dependence of the C–V characteristics on the strained-Si layer thickness, doping concentration and Ge fraction is studied. Also, the reason of the shift of the plateau, observed in the gate C–V characteristics of the strained-Si pMOS capacitor, from the inversion region to the accumulation region as doping concentration increasing, has been explained. The results from the models show excellent agreement with the simulations and experimental data. The proposed models can be used to guide the design and has been implemented in the software for extracting the parameter of strained-Si MOSFET.
► The quasi-static CV characteristics of strained-Si/SiGe pMOS capacitor is modeled. ► The shift of the plateau in the CV characteristics is substrate doping dependent. ► The plateau’s position depends on the thickness of strained-Si layer. ► Ge fraction can also strongly affect the CV characteristics of this device.
