Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing

Quantum well (QW) inter-mixing based post-growth energy band gap turning of 980 nm InGaAs/InGaAsP QW-structures for high power semi-conductor lasers has been investigated. The QW intermixing was carried out by depositing SiO2 thin film on the samples and followed by high temperature annealing. The band gap energy blue shift of the QWs after the intermixing under various conditions has been studied. The largest band gap energy blue shift of the QWs reaches exceeds 220 nm.

► InGaAs/InGaAsP single QW 980 nm laser structure has been investigated by QWI. ► It was compared by the different thickness and growth method of SiO2 with blue shift. ► It is the largest blue shift of the 980 nm QW laser after QWI reported so far. ► The results show the technique is good for developing the multi-wavelength LDs.