High-field mobility metal-gate/high-κ Ge n-MOSFETs with small equivalent-oxide-thickness

We fabricated high performance gate-last TaN/La2O3/SiO2 on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm2/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO2-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA).