Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748518 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
Sub-90Â nm n-MOSFETs have been studied at the sub-threshold and saturation operating regimes using infra-red photon emission intensity and current measurements. The results show a distinctive difference in the photon emission yield profile below and above threshold. A new mechanism for the higher photon emission rates in the sub-threshold regime is proposed. Electrical measurements together with 2-D numerical device simulations were carried out in order to verify this new mechanism.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Y. Weizman, M. Gurfinkel, A. Margulis, Y. Fefer, Y. Shapira, E. Baruch,