Article ID Journal Published Year Pages File Type
748532 Solid-State Electronics 2006 4 Pages PDF
Abstract

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage current at a wide range of temperatures from 133 K to 475 K, we are able to identify the electron transport mechanism and measure the thermal-activation energy of the ultrathin oxide films. This thermal-activation energy is proposed as a parameter to generally characterize the quality of ultrathin dielectrics on semiconductors.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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