Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748532 | Solid-State Electronics | 2006 | 4 Pages |
Abstract
We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage current at a wide range of temperatures from 133 K to 475 K, we are able to identify the electron transport mechanism and measure the thermal-activation energy of the ultrathin oxide films. This thermal-activation energy is proposed as a parameter to generally characterize the quality of ultrathin dielectrics on semiconductors.
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Engineering
Electrical and Electronic Engineering
Authors
H.C. Lin, P.D. Ye, G.D. Wilk,