CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0.53Ga0.47As n-MOSFETs

CoInGaAs, a new self-aligned silicide-like source/drain (S/D) metallic contact, was demonstrated on In0.53Ga0.47As n-MOSFET. Co reacts with In0.53Ga0.47As at temperatures as low as 350 °C, forming metallic material comprising regions rich in cobalt gallium and cobalt arsenide. The CoInGaAs formed exhibits Schottky characteristic on p-type In0.53Ga0.47As, and is thus suitable for S/D material. It also exhibits ohmic behavior on n-type In0.53Ga0.47As (doping concentration of ∼5 × 1019 cm−3) with contact resistance and specific contact resistivity of ∼1.12 kΩ μm and ∼6.25 × 10−4 Ω cm2, respectively. The integration of CoInGaAs as metallic S/D material in In0.53Ga0.47As n-MOSFET produces reasonably well-behaved output characteristics.