Self-aligned multi-channel silicon nanowire field-effect transistors

Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with a standard photolithographic process. The electrical characteristics of SiNW FETs containing different numbers of nanowire channels were measured and compared. The multi-channel SiNW FETs show excellent performance: small subthreshold slope (≈75 mV/dec), large ON/OFF ratio (≈108), good break-down voltage (>30 V) and good carrier mobility (μp ≈ 100 cm2 V−1s−1). These excellent device properties were achieved by using a clean self-alignment process and an improved device structure with Schottky barriers at the source and drain contacts. Such high-performance multi-nanowire FETs are attractive for logic, memory, and sensor applications.

► Self-assembled multi-channel Si nanowire field-effect transistors. ► Devices with more nanowire channels have better performance. ► Multi-channel Si nanowire FET has excellent subthreshold slope and ON/OFF ratio. ► Multi-channel SiNW FETs sustain higher drain voltage.