Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Article ID	Journal	Published Year	Pages	File Type
748584	Solid-State Electronics	2012	5 Pages	PDF

Abstract

âº Non Volatile Memory (NVM) reliability. âº Non Volatile Memory (NVM) design and test. âº Emerging memories (Resistive RAMs). âº Yield optimization and failure analysis. âº Fault modeling and simulation.

Keywords

SILC EEPROM Oxide degradation Reliability

Related Topics

Physical Sciences and Engineering Engineering Electrical and Electronic Engineering

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Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Authors

H. Aziza, J.M. Portal, J. Plantier, C. Reliaud, A. Regnier, J.L. Ogier,