| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748594 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠We evaluated gettering efficiencies in device process after p-well formation. ⺠For evaluation of gettering efficiencies, we used the trace analysis of the 65Cu and 60Ni isotope. ⺠We identify the wafer with good gettering ability and investigate the major effects of gettering. ⺠pâ/p+ epitaxial wafers have better gettering efficiency than other bulk silicon wafers.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sung-Wook Lee, Sang-Hak Lee, Don-Ha Hwang, Hee-Bog Kang,