| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748617 | Solid-State Electronics | 2010 | 7 Pages |
Abstract
A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current–voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
A. Ortiz-Conde, A.D. Latorre Rey, W. Liu, W.-C. Chen, H.-C. Lin, J.J. Liou, J. Muci, F.J. García-Sánchez,