| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748618 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
The electrical characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), in the dark or under front-side illumination, were investigated at different temperatures. Temperatures ranging from 100 K to 300 K were applied in this study, and experimental results showed the degradation of on-state current, mobility, and threshold voltage at lower temperatures. Furthermore, different photo-leakage-current trends were found in this work. Accordingly, we provide the indirect recombination rate and the parasitic resistance (Rp) to explain the photo-leakage-current of a-Si:H TFTs under varied temperature operations.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
S.W. Tsao, T.C. Chang, P.C. Yang, S.C. Chen, J. Lu, M.C. Wang, C.M. Huang, W.C. Wu, W.C. Kuo, Y. Shi,