Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748619 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal–insulator–metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10−7 A/cm2 at −1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.
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Authors
C.H. Cheng, H.H. Hsu, P.C. Chen, B.H. Liou, Albert Chin, F.S. Yeh,