Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748622 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
The demonstration of a normally-off n-channel AlGaN/GaN hybrid metal–oxide–semiconductor heterojunction field-effect transistor (MOS-HFET) on Si substrate for large-current operation is reported. The AlGaN/GaN hybrid MOS-HFET has the merits of both a MOS channel and an AlGaN/GaN heterostructure with high mobility two dimensional electron gases (2DEG). The maximum drain current of over 100 A with 2 μm channel length and 340 mm channel width is performed. This is the best value for a normally-off GaN-based field-effect transistor. The specific on-state resistance is 9.3 mΩ cm2. The fabricated device also exhibits good normally-off operation with the threshold voltage of 2.7 V and the breakdown voltage of over 600 V.
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Electrical and Electronic Engineering
Authors
Hiroshi Kambayashi, Yoshihiro Satoh, Shinya Ootomo, Takuya Kokawa, Takehiko Nomura, Sadahiro Kato, Tat-sing Pawl Chow,