Microwave power and simulation of S-band SiC MESFETs

In this paper we report our research on DC and S parameter simulations and DC and RF characteristics experimental results of 4H–SiC MESFETs on a high purity semi-insulating substrate. 4H-SiC MESFETs were fabricated using home-grown epi structures. We designed our own devices process to fabricate n-channel 4H–SiC MESFETs with 200 μm gate periphery. At a frequency of 2 GHz and at 79 V drain voltage, the maximum output power density CW is measured to be 7.8 W/mm, with a gain of 11.9 dB, and power-added efficiency 40%. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) is 8.7 GHz and 25.5 GHz, respectively. The simulation result of fT and fmax is 11.4 GHz and 38.6 GHz, respectively.