| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748644 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
Se-doped GeSb were investigated for the possible applications in three-level phase-change memory. Ge15Sb85Se0.8, as a typical composition, has two abrupt drops of electrical resistance during an in situ temperature-dependent resistance measurement. The large-resistance change in the two drops and the stable middle-resistance state make Ge15Sb85Se0.8 a good candidate for the three-level data storage applications. Three-level phase-change memory based on Ge15Sb85Se0.8 has been fabricated and demonstrated. X-ray diffraction patterns indicate that the reason for the middle-resistance state in Ge15Sb85Se0.8 is due to the incomplete crystallization.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Yifeng Gu, Zhitang Song, Ting Zhang, Bo Liu, Songlin Feng,