Article ID Journal Published Year Pages File Type
748646 Solid-State Electronics 2010 5 Pages PDF
Abstract

In this paper, the photoluminescence of as-prepared porous silicon were investigated. The visible light emission is associated with surface defects states of porous silicon. The hydrogen atoms on porous silicon surface can passivate irradiative centers and lead to the increase of emission intensity, which can be proved by the microwave-detected photoconductivity decay measurements.

Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
The relationship between hydrogen atoms and photoluminescent properties of porous silicon prepared by different etching time
Authors
, , , , , , , ,