Effects of switching from 〈1 1 0〉 to 〈1 0 0〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors

We investigate the effects of switching from 〈1 1 0〉 to 〈1 0 0〉 channel orientation on NMOS and PMOS transistors. For NMOS transistors, we have experimentally demonstrated that there is negligible electron mobility degradation after the switching. The decrease in on-current (Ion) of 〈1 0 0〉 NMOS transistors is caused by an increase in the effective channel length due to a reduction in the lateral ion channeling of the source/drain extension implants and the halo implants. For PMOS transistors, the increase in hole mobility dominates over the reduction of lateral ion channeling, and thus Ion of 〈1 0 0〉 PMOS transistor increases. By exploiting the stress insensitivity of 〈1 0 0〉 PMOS transistors, we can use a single tensile liner to improve NMOS transistors while not degrading PMOS transistors instead of using a more complicated process involving a tensile stress liner for NMOS transistors and a compressive liner for PMOS transistors.