Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748657 | Solid-State Electronics | 2012 | 4 Pages |
Abstract
We have fabricated n-channel junctionless nanowire transistors with gate lengths in the range of 20–250 nm, and have compared their electrical performances with conventional inversion-mode nanowire transistors. The junctionless tri-gate transistor with a gate length of 20 nm showed excellent electrical characteristics with a high Ion/Ioff ratio (>106), good subthreshold slope (∼79 mV/dec), and low drain-induced barrier lowering (∼10 mV/V). The simpler fabrication process without junction formation results in improved short-channel characteristics compared to the inversion-mode devices, and also makes the junctionless nanowire transistor a promising candidate for sub 22-nm technology nodes.
Related Topics
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Engineering
Electrical and Electronic Engineering
Authors
Chan-Hoon Park, Myung-Dong Ko, Ki-Hyun Kim, Rock-Hyun Baek, Chang-Woo Sohn, Chang Ki Baek, Sooyoung Park, M.J. Deen, Yoon-Ha Jeong, Jeong-Soo Lee,