Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide

Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 106 cycling endurance are achieved in Ni/GeOx/Ta2O5−yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5−yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents.

► Nitrogen-doped GeO/TaON RRAM shows low 0.6 pJ energy and good 106 endurance. ► Excellent uniformity is attributed to nitrogen-related defects in TaON for better hopping. ► Hopping conduction leads to fast 30 ns switching speed, low self-compliance set current.