Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents

InxGa1−xAs III–V compound semiconductor metal–oxide–semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the InxGa1−xAs materials. The impact of In content on the accumulation and inversion behaviors of the Al2O3/InxGa1−xAs capacitors is investigated in this study. For the various InxGa1−xAs materials studied, the Al2O3/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other InxGa1−xAs materials. Also, very low gate leakage current in the 10−8 A/cm2 range was observed for these capacitors. These results demonstrate that Al2O3/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications.