| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748702 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
A 2-D analytical thermal model for the I–V characteristics of AlGaN/GaN is presented. The effect of self-heating is studied by investigating the temperature effects on various parameters: the 2DEG sheet carrier density, the Fermi level, the electron mobility, the saturation velocity and the critical field. After incorporating self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Xiaoxu Cheng, Miao Li, Yan Wang,