Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748708 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
We have fabricated III-nitride metal-oxide field effect transistors (MOSFETs) using high-k HfO2 as a gate oxide. Two types of MOSFETs were studied; GaN MOSFETs and AlGaN/GaN MOSFETs. In the case of GaN MOSFETs, the maximum transconductance of 45 mS/mm has been obtained. This is seven times larger than the best-reported value, to our knowledge, for the normally-off GaN MOSFETs with SiO2 gate oxide. In order to improve the performance of the device, AlGaN/GaN MOSFETs in which high-quality AlGaN/GaN heterointerface is used as a channel have been fabricated. The maximum transconductance and drain current were as high as 160 mS/mm and 840 mA/mm, respectively.
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Engineering
Electrical and Electronic Engineering
Authors
S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, T. Tanaka,