| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748713 | Solid-State Electronics | 2012 | 6 Pages |
In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behaviour by highlighting the features of the I–V and C–V characteristics, as well as the electrostatic potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes.
► Numerical and experimental investigation of junctionless nanowire the FET. ► Simplified manufacturing process and nearly ideal subthreshold slope. ► Constrain on the impurity concentration to have an appropriate threshold voltage. ► Large threshold variability and access resistance.
