Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748714 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
The chemical reactions at the higher-κ LaLuO3/Ti1NX/poly-Si gate stack interfaces are in detail investigated. Electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing while the gate stack with a near stoichiometric TiN layer is stable during 1000 °C, 5 s anneals. Based on these results an integration process of TiN/LaLuO3 in a gate-first MOSFET process on SOI is shown.
► MOSFETs with LaLuO3 ternary rare earth oxide. ► High temperature CMOS compatible processing up to 1000 °C/5 s. ► EELS and HAXPES interface and composition analysis. ► Interface analysis using synchrotron radiation.
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Authors
A. Nichau, E. Durğun Özben, M. Schnee, J.M.J. Lopes, A. Besmehn, M. Luysberg, L. Knoll, S. Habicht, V. Mussmann, R. Luptak, St. Lenk, J. Rubio-Zuazo, G.R. Castro, D. Buca, Q.T. Zhao, J. Schubert, S. Mantl,