Article ID Journal Published Year Pages File Type
748714 Solid-State Electronics 2012 6 Pages PDF
Abstract

The chemical reactions at the higher-κ LaLuO3/Ti1NX/poly-Si gate stack interfaces are in detail investigated. Electrical and structural characterization methods are employed to explore the thermal stability of the gate stack. A Ti-rich TiN metal layer degrades the gate stack performance after high temperature annealing while the gate stack with a near stoichiometric TiN layer is stable during 1000 °C, 5 s anneals. Based on these results an integration process of TiN/LaLuO3 in a gate-first MOSFET process on SOI is shown.

► MOSFETs with LaLuO3 ternary rare earth oxide. ► High temperature CMOS compatible processing up to 1000 °C/5 s. ► EELS and HAXPES interface and composition analysis. ► Interface analysis using synchrotron radiation.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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