Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrödinger equations. The 6 × 6 k·p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C–V curve is systematically studied.

► Simulation results of electrostatics in Si junctionless nanowire FETs are presented. ► Junctionless FETs including strain and arbitrary channel orientations are studied. ► Size quantization effects are simulated by self-consistent solutions of PE and SE. ► 6 × 6 k·p Model is used for the calculation of the valence subband structure in a pFET. ► Subband structure, charge density, C–V curve variation is systematically studied.