Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

A multiphonon-assisted model included in a Poisson–Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependencies of trap capture cross-sections with trap energy, depth, applied bias and temperature have been extracted, with the purpose of evaluating the accuracy of constant cross-section models adopted in compact and empirical approaches. The model has been applied to the extraction of interface trap concentrations and to the accurate AC analysis of the trap frequency response.

► We modeled capture/emission charge trapping rates of CMOS oxide interface defects using a multiphonon-assisted model coupled with a Poisson–Schroedinger solver. ► We extracted the dependencies of capture cross-sections with trap energy, depth, applied bias and temperature. ► Exponential variations of the frequency response of traps with energy and defect depth are found. ► We applied the methodology to the extraction of interface trap concentrations and AC analysis.