| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748727 | Solid-State Electronics | 2012 | 8 Pages |
The frequency variation of the output conductance in ultra-thin body with ultra-thin BOX (UTBB) SOI MOSFETs without a ground plane is studied through measurements and two-dimensional simulations. Two effects causing the output conductance variation with frequency, namely self-heating and source-to-drain coupling through the substrate, are discussed and qualitatively compared. Notwithstanding the use of ultra-thin BOX, which allows for improved heat evacuation from the channel to the Si substrate underneath BOX, a self-heating-related transition clearly appears in the output conductance frequency response. Furthermore, the use of an ultrathin BOX results in an increase of the substrate-related output conductance variation in frequency. As a result, the change in output conductance of UTBB MOSFETs caused by the substrate effect appears to be comparable and even stronger than the change due to self-heating.
► Study of self-heating and substrate effects in ultra-thin body and BOX SOI MOSFETs. ► These effects cause the small-signal output conductance gd variation with frequency. ► The use of an ultra-thin BOX results in an increase of the substrate-related effect. ► Substrate effect may cause stronger gd variation with frequency than self-heating.
