| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748743 | Solid-State Electronics | 2009 | 4 Pages |
Abstract
This paper presents the results of investigations on high-speed self-aligned Si/SiGe:C HBTs featuring a selective epitaxial growth of the collector. We detail the dc and ac characteristics of the devices and demonstrate the improvement of the control of doping profiles at the base/collector junction. State-of-the-art fT value of 350 GHz has been achieved, the fT BVCEO product being equal to 525 GHz. V.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
B. Geynet, P. Chevalier, F. Brossard, B. Vandelle, T. Schwartzmann, M. Buczko, G. Avenier, D. Dutartre, G. Dambrine, F. Danneville, A. Chantre,