Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748761 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
Ideal barrier metal arrangements in tungsten dual poly-metal (W/barrier metals/dual poly-Si) gates were developed for high performance, low-power and high density-memory devices. An additional metallic amorphous layer, such as TiN/WSix/WN, inserted at the diffusion barrier metals of Ti/WN resulted in both a low gate contact (Rc) and sheet resistance (Rs), which may result in superior improvement of the ring oscillator delay characteristics.
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Authors
Min-Gyu Sung, Yong Soo Kim, Sook Joo Kim, Ii-Kyo Jeong, Hak-Soon Choi, Moon-Su Kim, Heonho Kim, Sung-Ki Park,