| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748765 | Solid-State Electronics | 2012 | 7 Pages |
Abstract
⺠We use quantum-corrected DD simulations to study the variability in IF III-V MOSFETs. ⺠Quantum corrections (QCs) are introduced through the DG approach. ⺠We use an atomistic mesh to resolve the exact positions of the random dopants (RDs). ⺠We have investigated the RD induced variability in the Vt, Ioff, and SS of the device. ⺠QCs lead to a decrease in the Vt fluctuations when compared to the classical DD.
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Authors
N. Seoane, M. Aldegunde, A. Garcı´a-Loureiro, R. Valin, K. Kalna,