Location controlled high performance single-grain Ge TFTs on glass substrate

Article ID	Journal	Published Year	Pages	File Type
748773	Solid-State Electronics	2012	5 Pages	PDF

Abstract

âº We have fabricated high performance single-grain Ge TFT under 600Â Â°C. âº Excimer laser annealing of Si at S/D improves on-off ratio of Ge TFT. âº Interface between Ge and oxide is improved by excimer laser crystallization. âº Tensile stress inside Ge channel improves the field effect mobility.

Keywords

Thin film transistors Excimer laser crystallization Laser crystallization

Related Topics

Physical Sciences and Engineering Engineering Electrical and Electronic Engineering

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Location controlled high performance single-grain Ge TFTs on glass substrate

Authors

Tao Chen, Ryoichi Ishihara, Kees Beenakker,