Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748778 | Solid-State Electronics | 2009 | 10 Pages |
Abstract
The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson’s equation. 2D Poisson’s equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta, Amitava DasGupta,