| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748783 | Solid-State Electronics | 2009 | 7 Pages |
Abstract
A comprehensive model to accurately and simply describe the trapping property and its influence on device frequency characteristics is proposed for SiC MESFET. DC performance is simulated and trap parameters are extracted. Both positive and negative frequency dispersions of transconductance are simulated and analyzed with deep level traps and self-heating effects. Good agreements with reported results are obtained.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hongliang Lu, Yimen Zhang, Yuming Zhang, Tao Zhang,