| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748786 | Solid-State Electronics | 2009 | 6 Pages |
A new precision reclaim design process using micro-electroetching (MECE) as a removal process for indium-tin-oxide (In2O3SnO2) nanostructure removal from the surface of polyethylene terephthalate (PET) digital paper is presented. The design features of the removal process for In2O3SnO2 and the tool design of the sphere-form cathode are of major interest. A cathode with a large diameter and a small gap-width between the cathode and the PET-film are advantageous in achieving a fast feed rate. A small end radius of the sphere-form cathode, a pulsed direct current, a higher electrolyte concentration or temperature, or a higher cathode rotational speed can be used to achieve a higher etching rate for In2O3SnO2. Through the ultra-precise etching of the nanostructure, the optoelectronic semiconductor industry can effectively reclaim defective products, thereby reducing production costs. A validity evaluation of the In2O3SnO2 removal in MECE is constructed in the current study.
