Measurement of the MOSFET drain current variation under high gate voltage

The method for accurately measuring the drain current of the MOSFETs, which are integrated in an array and are biased at high gate voltage, is studied. Feedback loop in Kelvin connection is made by software to obtain both accurate and stable measurement. The experimental data show that this Kelvin measurement is accurate and it is applicable to evaluate the accuracy of the conventional Kelvin measurement using the hardware feedback loop. New test circuit containing 16 K cells is developed. This test circuit and Kelvin measurements are successfully used for evaluating the MOSFET drain current variation.