Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748809 | Solid-State Electronics | 2012 | 4 Pages |
Abstract
NiSi nanocrystals of high density and good uniformity were synthesized by vapor–solid–solid growth in a gas source molecular beam epitaxy system using Si2H6 as Si precursor and Ni as catalyst. A metal–oxide–semiconductor memory device with NiSi nanocrystal–Al2O3/SiO2 double-barrier structure was fabricated. Large memory window and excellent retention at both room temperature and high temperature of 85 °C were demonstrated.
► NiSi nanocrystals of high density and good uniformity were synthesized. ► MOS memory with band-engineered NC-double-barrier structure as floating gate was fabricated. ► Excellent retention at both room temperature and 85 °C were demonstrated.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jingjian Ren, Bei Li, Jian-Guo Zheng, Jianlin Liu,