Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

We have developed an advanced inversion charge model for both n-type and p-type symmetrical Double-Gate MOSFETs where quantum mechanical effects (QMEs) have been included. By doing so, the role of different crystallographic orientations was successfully taken into account. Self-consistent Poisson and Schrödinger simulators were used to check the accuracy of the model presented. As a starting point, a classical inversion charge centroid model was considered. Afterwards, an inversion charge model was developed including QMEs by means of a corrected oxide capacitance. The validity of the model was checked for the three common wafer orientations (1 0 0), (1 1 0) and (1 1 1) and for devices with different silicon layer (tSi) and oxide (tox) thicknesses. As it will be shown, the model reproduces correctly the simulation data both in the subthreshold and in the strong inversion operation regime.

► A model for the inversion charge of Double-Gate MOSFETs was developed including quantum effects. ► Different substrate crystallographic orientations and device geometries have been considered. ► The model reproduces simulation data for n- and p-type devices for a broad range of gate voltages.