| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748896 | Solid-State Electronics | 2009 | 6 Pages |
Abstract
We have presented a theoretical calculation of the scattering intensity for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in GaAs/Ga1-xAlxAsGaAs/Ga1-xAlxAs quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Singularities in the Raman spectra for various xx are found and interpreted. The numerical results are also compared with that of experiments.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Qing-Hu Zhong, Cui-Hong Liu,