Article ID Journal Published Year Pages File Type
748902 Solid-State Electronics 2009 4 Pages PDF
Abstract

A simple wet etching method based on the use of hot sulphuric (H2SO4) acid for roughening of the backside of the sapphire substrates for creating light scattering objects without any lithography processes is described. Scanning electron microscope images show that this method offers a possibility to tailor the size of the scattering objects by varying the treatment time. A metal organic vapor phase epitaxy (MOVPE) grown light emitting diode (LED) structure having a roughened sapphire backside exhibits a 20–25% increase of the electroluminescence output power compared to a reference sample on the standard c-plane sapphire at the operating wavelength of 460 nm.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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