| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748913 | Solid-State Electronics | 2009 | 7 Pages |
In this article, a new method, based on the differential evolution (DE) of determining the Schottky-barrier height, ideality factor and series resistance of Schottky-barrier diode (SBD) model using forward current–voltage (I–V) characteristics, is discussed. For the DE method, initial guesses close to the solutions are not required. It can combat the parameter determination problem of the SBD model based on a very broad range specified for each parameter. The performance of the proposed DE method is compared with other commonly used model parameter determination technologies, including genetic algorithm (GA), simulated annealing algorithm (SA), Nelder–Mead simplex search method (SM) and least squares technique (LS). The comparative result indicates that the DE method can obtain optimum solutions more easily than others.
