| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748921 | Solid-State Electronics | 2011 | 8 Pages |
Abstract
A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics.
Research highlights► Caclulate band-to-band tunneling current in 2D device structures. ► Proposed algorithm based on multi-dimension extension of WKB approximation. ► Physical and robust simulation of tunneling FET is achieved with the new algorithm.
Related Topics
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Engineering
Electrical and Electronic Engineering
Authors
Chen Shen, Li-Tao Yang, Ganesh Samudra, Yee-Chia Yeo,