Article ID Journal Published Year Pages File Type
748960 Solid-State Electronics 2010 5 Pages PDF
Abstract

A novel design of photodetector was proposed which is based on quantum dots resonant-tunneling diodes (QDRTD) coupled with conductive polymers. By using PPV, PVK, and SiHMFPV polymers as the photon absorption region, the device can detect photons with three different wavelengths in the UV–visible range. The device characteristics were investigated theoretically in terms of its transmission coefficient and I–V curves. Moreover, the low frequency current noise of the device was analyzed using a modified Hooge’s empirical model. The minimum light sensitivity of the device was estimated to be in the order of 0.01 nW/cm2.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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