Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748961 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C–SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1 1 0) and Si(1 1 1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1 1 1) substrates give better flatness at the surface of the 3C–SiC layer. As a result, the EGFETs fabricated on Si(1 1 1) substrates exhibit higher channel currents than those on Si(1 1 0) substrates.
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Authors
Hyun-Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Hirokazu Fukidome, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji,