Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
748963 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
In this paper, the gate leakage current in metal-oxide-semiconductor (MOS) junctions/devices/or transistors is modeled and studied in order to find promising materials for double-gate (DG) MOSFETs at 22 nm node by considering analytical models of the direct tunneling current (based on a proper calculation of the WKB tunneling probability in the gate oxide). We present a theoretical study to find the most promising gate oxide materials for the 22 nm technological node with the predicted maximum value of leakage current (10−2 A/cm2) that is tolerable for that node, according to the ITRS roadmap. The effects of electron effective mass, dielectric constant k-value and barrier height on the ΔEc−k permitted values have been studied.
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Authors
Ghader Darbandy, Romain Ritzenthaler, Francois Lime, Ivan Garduño, Magali Estrada, Antonio Cerdeira, Benjamin Iñiguez,