| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 748980 | Solid-State Electronics | 2010 | 5 Pages |
Abstract
This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Koji Sakui, Tetsuo Endoh,