| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 749003 | Solid-State Electronics | 2008 | 6 Pages |
Abstract
In this article, the failure behavior of DMOS switches under repetitive clamping stress is shown to be dominated by thermomechanical deformation of the metallization. Electromigration stress is not a significant factor in the failure. This was verified with special stress tests, and the thermomechanical characteristics were furthermore highlighted by FEM simulation. Based on these findings, a novel metallization system that significantly improves the fast temperature cycle reliability is described.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Tobias Smorodin, Peter Nelle, Jörg Busch, Jürgen Wilde, Michael Glavanovics, Matthias Stecher,