Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates

The hole inversion layer mobility of in-plane uniaxially stressed Si is modeled by a microscopic approach. For an arbitrary crystallographic surface orientation the two dimensional hole gas subband structure is calculated by solving the 6 × 6 k→·p→ Schrödinger equation self-consistently with the electrostatic potential. Three important scattering mechanisms are included: optical phonon scattering, acoustic phonon scattering and surface roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of relaxed Si on (0 0 1) Si wafers. The calibrated model reproduces available channel mobility measurements for unstrained and uniaxially stressed Si on (0 0 1), (1 1 1) and (1 1 0) substrates.