Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749017 | Solid-State Electronics | 2008 | 8 Pages |
Abstract
In this paper, silicon nanocrystals (Si-NCs) fabricated by Chemical Vapor Deposition (CVD) are successfully integrated in a 32Â Mb ATMEL NOR Flash memory product, processed in a 130Â nm technology platform. Different Si-NC deposition conditions are explored and the threshold voltage distributions of the arrays are correlated to the Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are related to single cell characteristics. The large set of data measured on arrays clearly demonstrates the robustness of our process and integration scheme.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
S. Jacob, B. De Salvo, L. Perniola, G. Festes, S. Bodnar, R. Coppard, J.F. Thiery, T. Pate-Cazal, C. Bongiorno, S. Lombardo, J. Dufourcq, E. Jalaguier, T. Pedron, F. Boulanger, S. Deleonibus,