Article ID Journal Published Year Pages File Type
749022 Solid-State Electronics 2010 4 Pages PDF
Abstract

Our previously proposed concept of pragmatic FinFET design is overviewed, with new insights given, prior to presenting results of an assessment of nanoscale FinFETs on SOI versus bulk silicon (Si). The assessment is supported by 3-D numerical simulations of FinFETs for a comparison of the electrical properties of the SOI and bulk-Si FinFETs, and it includes a discussion of serious processing issues for the latter. The SOI FinFET is thereby suggested to be viable, whereas the bulk-Si FinFET (as currently defined) is not.

Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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