Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749022 | Solid-State Electronics | 2010 | 4 Pages |
Abstract
Our previously proposed concept of pragmatic FinFET design is overviewed, with new insights given, prior to presenting results of an assessment of nanoscale FinFETs on SOI versus bulk silicon (Si). The assessment is supported by 3-D numerical simulations of FinFETs for a comparison of the electrical properties of the SOI and bulk-Si FinFETs, and it includes a discussion of serious processing issues for the latter. The SOI FinFET is thereby suggested to be viable, whereas the bulk-Si FinFET (as currently defined) is not.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jerry G. Fossum, Zhenming Zhou, Leo Mathew, Bich-Yen Nguyen,