Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
749024 | Solid-State Electronics | 2010 | 7 Pages |
Abstract
This paper describes the simulation of the electrical characteristics of a new transistor concept called the “Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain. The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Pedram Razavi, Jean-Pierre Colinge,